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| www..com P ion. ange. h icat ecif ct to c l sp fina e subje ot a its ar is n m This etric li ice: m Not e para Som IM REL Y NAR I MITSUBISHI SEMICONDUCTOR M63817P/FP/KP 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE PIN CONFIGURATION IN1 IN2 IN3 INPUT 1 2 3 18 O1 17 O2 16 O3 15 O4 14 O5 13 O6 12 O7 11 O8 10 DESCRIPTION M63817P/FP/KP are eight-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. IN4 4 IN5 5 OUTPUT IN6 6 FEATURES Three package configurations (P, FP, and KP) q Medium breakdown voltage (BVCEO 35V) q Synchronizing current (IC(max) = 300mA) q With clamping diodes q Low output saturation voltage q Wide operating temperature range (Ta = -40 to +85C) q IN7 IN8 GND 7 8 9 COM COMMOM Package type 18P4G(P) NC 1 20 NC IN1 2 IN2 3 19 O1 18 O2 17 O3 16 O4 15 O5 14 O6 13 O7 12 O8 11 COM APPLICATION Driving of digit drives of indication elements (LEDs and lamps) with small signals IN3 4 IN4 5 INPUT IN5 6 IN6 7 IN7 8 IN8 9 OUTPUT FUNCTION The M63817P/FP/KP each have eight circuits consisting of NPN transistor. A spike-killer clamping diode is provided between each output pin (collector) and COM pin. The transistor emitters are all connected to the GND pin. The transistors allow synchronous flow of 300mA collector current. A maximum of 35V voltage can be applied between the collector and emitter. GND 10 COMMOM NC : No connection 20P2N-A(FP) Package type 20P2E-A(KP) CIRCUIT DIAGRAM COM OUTPUT INPUT 10.5k 10k GND The eight circuits share the COM and GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit: Jan. 2000 P ion. ange. h icat ecif ct to c l sp fina e subje ot a its ar is n m This etric li ice: m Not e para Som IM REL Y NAR I MITSUBISHI SEMICONDUCTOR M63817P/FP/KP 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE ABSOLUTE MAXIMUM RATINGS Symbol VCEO IC VI IF VR Pd Topr Tstg Parameter Collector-emitter voltage Collector current Input voltage (Unless otherwise noted, Ta = -40 ~ +85C) Conditions Output, H Current per circuit output, L Ratings -0.5 ~ +35 300 -0.5 ~ +35 300 M63817P 35 1.79 1.10 0.68 -40 ~ +85 -55 ~ +125 Unit V mA V mA V W C C Clamping diode forward current Clamping diode reverse voltage Power dissipation Operating temperature Storage temperature Ta = 25C, when mounted on board M63817FP M63817KP RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = -40 ~ +85C) Symbol VO Parameter Output voltage Collector current IC (Current per 1 circuit when 8 circuits are coming on simultaneously) VIN Input voltage M63817KP M63817P M63817FP Duty Cycle no more than 50% Duty Cycle no more than 100% Duty Cycle no more than 30% Duty Cycle no more than 100% Duty Cycle no more than 12% Duty Cycle no more than 100% Test conditions Limits min 0 0 0 0 0 0 0 0 typ -- -- -- -- -- -- -- -- max 35 250 170 250 130 250 100 30 Unit V mA V ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25C) Symbol V (BR) CEO VCE(sat) VIN(on) VF IR hFE Parameter Collector-emitter breakdown voltage Test conditions Limits min 35 -- -- 7.5 -- -- 50 typ -- -- -- 11.0 1.2 -- -- max -- 0.2 0.8 15.0 2.0 10 -- Unit V V V V A -- ICEO = 10A IIN = 1mA, IC = 10mA Collector-emitter saturation voltage IIN = 2mA, IC = 150mA "On" input voltage IIN = 1mA, IC = 10mA Clamping diode forward volltage IF = 250mA Clamping diode reverse current VR = 35V DC amplification factor VCE = 10V, IC = 10mA SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25C) Symbol ton toff Parameter Turn-on time Turn-off time CL = 15pF (note 1) Test conditions Limits min -- -- typ 120 240 max -- -- Unit ns ns Jan. 2000 P ion. ange. h icat ecif ct to c l sp fina e subje ot a its ar is n m This etric li ice: m Not e para Som IM REL Y NAR I MITSUBISHI SEMICONDUCTOR M63817P/FP/KP 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE TIMING DIAGRAM Vo 50% 50% NOTE 1 TEST CIRCUIT INPUT Measured device OPEN PG RL OUTPUT INPUT OUTPUT 50 CL 50% 50% ton (1)Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10s, tr = 6ns, tf = 6ns, Zo = 50, VIH = 11V (2)Input-output conditions : RL = 220, Vo = 35V (3)Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes toff TYPICAL CHARACTERISTICS Thermal Derating Factor Characteristics 2.0 M63817P Input Characteristics 4 Ta = -40C Power dissipation Pd (W) Input current II (mA) 1.5 M63817FP 3 Ta = 25C 1.0 M63817KP 0.931 2 0.5 0.572 0.354 Ta = 85C 1 0 0 25 50 75 85 100 0 0 5 10 15 20 25 30 Ambient temperature Ta (C) Duty Cycle-Collector Characteristics (M63817P) 400 400 Input voltage VI (V) Duty Cycle-Collector Characteristics (M63817P) Collector current Ic (mA) 300 1~5 6 7 8 Collector current Ic (mA) 300 1~3 4 5 6 7 8 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Ta = 85C 200 200 100 0 0 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Ta = 25C 100 20 40 60 80 100 0 0 20 40 60 80 100 Duty cycle (%) Duty cycle (%) Jan. 2000 P ion. ange. h icat ecif ct to c l sp fina e subje ot a its ar is n m This etric li ice: m Not e para Som IM REL Y NAR I MITSUBISHI SEMICONDUCTOR M63817P/FP/KP 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE Duty Cycle-Collector Characteristics (M63817FP) 400 400 Duty Cycle-Collector Characteristics (M63817FP) Collector current Ic (mA) 300 200 1~3 4 5 6 7 8 Collector current Ic (mA) 300 1 2 3 200 100 0 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Ta = 25C 100 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Ta = 85C 4 5 67 8 0 20 40 60 80 100 0 0 20 40 60 80 100 Duty cycle (%) Duty Cycle-Collector Characteristics (M63817KP) 400 400 Duty cycle (%) Duty Cycle-Collector Characteristics (M63817KP) Collector current Ic (mA) 300 1~2 3 Collector current Ic (mA) 300 1 200 4 5 6 7 8 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Ta = 25C 2 200 3 4 5 67 8 100 100 0 0 20 40 60 80 100 0 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Ta = 85C 0 20 40 60 80 100 Duty cycle (%) Output Saturation Voltage Collector Current Characteristics 250 Ta = 25C IB = 2mA IB = 3mA Duty cycle (%) Output Saturation Voltage Collector Current Characteristics 100 Ta = 25C VI = 28V Collector current Ic (mA) Collector current Ic (mA) 200 IB = 1.5mA 80 VI = 24V VI = 20V 150 IB = 1mA 60 VI = 16V VI = 12V 100 IB = 0.5mA 40 20 VI = 8V 50 0 0 0.2 0.4 0.6 0.8 0 0 0.05 0.10 0.15 0.20 Output saturation voltage VCE(sat) (V) Output saturation voltage VCE(sat) (V) Jan. 2000 P ion. ange. h icat ecif ct to c l sp fina e subje ot a its ar is n m This etric li ice: m Not e para Som IM REL Y NAR I MITSUBISHI SEMICONDUCTOR M63817P/FP/KP 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE Output Saturation Voltage Collector Current Characteristics 100 II = 2mA DC Amplification Factor Collector Current Characteristics 103 7 5 3 2 VCE 10V Ta = 25C Collector current Ic (mA) 80 Ta = -40C Ta = 25C Ta = 85C 60 DC amplification factor hFE 0.20 102 7 5 3 2 40 20 0 0 0.05 0.10 0.15 101 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 Collector current Ic (mA) Output saturation voltage VCE(sat) (V) Grounded Emitter Transfer Characteristics 50 VCE = 4V Grounded Emitter Transfer Characteristics 250 VCE = 4V Ta = 85C Collector current Ic (mA) Collector current Ic (mA) 40 200 150 Ta = 25C 30 Ta = 85C 20 Ta = -40C 100 50 Ta = 25C Ta = -40C 10 0 0 1.0 2.0 3.0 4.0 5.0 0 0 4 8 12 16 20 Input voltage VI (V) Input voltage VI (V) Clamping Diode Characteristics 250 Forward bisa current IF (mA) 200 150 Ta = 85C 100 Ta = 25C Ta = -40C 50 0 0 0.4 0.8 1.2 1.6 2.0 Forward bias voltage VF (V) Jan. 2000 |
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